1 2N5060 series preferred device sensitive gate silicon controlled rectifiers reverse blocking thyristors annular pnpn devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. supplied in an inexpensive plastic to?92/to-226aa package which is readily adaptable for use in automatic insertion equipment. features ? pb?free packages are available* ? sensitive gate trigger current ? 200 a maximum ? low reverse and forward blocking current ? 50 a maximum, t c = 110 c ? low holding current ? 5 ma maximum ? passivated surface for reliability and uniformity ? device marking: device type, e.g., 2N5060, date code *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. silicon controlled rectifiers 0.8 a rms, 30 ? 200 v preferred devices are recommended choices for future use and best overall value. 3 2 1 k g a www.kersemi.com see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information to?92 case 29 style 10 50xx specific device code y = year ww = work week marking diagram 2n 50xx yww
2N5060 series www.kersemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off?state voltage (note 1) (t j = 40 to 110 c, sine wave, 50 to 60 hz, gate open) 2N5060 2n5061 2n5062 2n5064 v drm, v rrm 30 60 100 200 v on-state current rms (180 conduction angles; t c = 80 c) i t(rms) 0.8 a *average on-state current (180 conduction angles) (t c = 67 c) (t c = 102 c) i t(av) 0.51 0.255 a *peak non-repetitive surge current, t a = 25 c (1/2 cycle, sine wave, 60 hz) i tsm 10 a circuit fusing considerations (t = 8.3 ms) i 2 t 0.4 a 2 s *average on-state current (180 conduction angles) (t c = 67 c) (t c = 102 c) i t(av) 0.51 0.255 a *forward peak gate power (pulse width 1.0 sec; t a = 25 c) p gm 0.1 w *forward average gate power (t a = 25 c, t = 8.3 ms) p g(av) 0.01 w *forward peak gate current (pulse width 1.0 sec; t a = 25 c) i gm 1.0 a *reverse peak gate voltage (pulse width 1.0 sec; t a = 25 c) v rgm 5.0 v *operating junction temperature range t j ?40 to +110 c *storage temperature range t stg ?40 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a cons tant current source such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol max unit *thermal resistance, junction?to?case (note 2) r jc 75 c/w thermal resistance, junction?to?ambient r ja 200 c/w *lead solder temperature (lead length 1/16 from case, 10 s max) ? +230* c 2. this measurement is made with the case mounted aflat side downo on a heat sink and held in position by means of a metal clamp over the curved surface. *indicates jedec registered data.
2N5060 series 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics *peak repetitive forward or reverse blocking current (note 3) (v ak = rated v drm or v rrm )t c = 25 c t c = 110 c i drm , i rrm ? ? ? ? 10 50 a a on characteristics *peak forward on?state voltage (note 4) (i tm = 1.2 a peak @ t a = 25 c) v tm ? ? 1.7 v gate tri gger current (continuous dc) (note 5) *(v ak = 7.0 vdc, r l = 100 )t c = 25 c t c = ?40 c i gt ? ? ? ? 200 350 a gate tri gger v oltage (continuous dc) (note 5) t c = 25 c *(v ak = 7.0 vdc, r l = 100 )t c = ?40 c v gt ? ? ? ? 0.8 1.2 v *gate non?tri gger v oltage (v ak = rated v drm , r l = 100 )t c = 110 c v gd 0.1 ? ? v holding current (note 5) t c = 25 c *(v ak = 7.0 vdc, initiating current = 20 ma) t c = ?40 c i h ? ? ? ? 5.0 10 ma turn-on time delay time rise time (i gt = 1.0 ma, v d = rated v drm , forward current = 1.0 a, di/dt = 6.0 a/ s t d t r ? ? 3.0 0.2 ? ? s turn-off time (forward current = 1.0 a pulse, pulse width = 50 s, 0.1% duty cycle, di/dt = 6.0 a/ s, dv/dt = 20 v/ s, i gt = 1 ma) 2N5060, 2n5061 2n5062, 2n5064 t q ? ? 10 30 ? ? s dynamic characteristics critical rate of rise of off?state voltage (rated v drm , exponential) dv/dt ? 30 ? v/ s 3. r gk = 1000 is included in measurement. 4. forward current applied for 1 ms maximum duration, duty cycle 1%. 5. r gk current is not included in measurement. *indicates jedec registered data. + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) www.kersemi.com
2N5060 series 4 120 50 60 70 80 90 100 110 0 0.1 0.2 0.3 0.4 130 0.5 i t(av) , average on-state current (amp) a dc 110 30 50 70 90 130 dc a 0 0.1 0.2 0.3 0.4 i t(av) , average on-state current (amp) t c , maximum allowable case temperature ( c) t a , maximum allowable ambient temperature ( c) a = 30 a = 30 60 90 90 120 120 180 case measurement point - center of flat portion 60 180 typical printed circuit board mounting a = conduction angle a = conduction angle figure 1. maximum case temperature figure 2. maximum ambient temperature current derating p (av) , maximum average power dissipation (watts) 5.0 0.05 0.01 0.02 0 0.5 1.0 1.5 2.0 3.0 2.5 v t , instantaneous on-state voltage (volts) 0.07 0.03 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 25 c t j = 110 c 30 7.0 1.0 3.0 2.0 10 1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 0 0.2 0.4 0.6 a 0.1 0.4 dc 0.8 0 0.2 0.5 a = conduction angle 0.3 number of cycles i t(av) , average on-state current (amp) i t , instantaneous on-state current (amp) i tsm , peak surge current (amp) a = 30 60 90 120 180 figure 3. typical forward voltage figure 4. maximum non?repetitive surge current figure 5. power dissipation current derating www.kersemi.com
2N5060 series 5 0.7 0.3 0.4 0.5 0.6 0.8 v ak = 7.0 v r l = 100 r gk = 1.0 k 3.0 0.8 0.4 0.6 1.0 2.0 50 0 -75 -50 -25 4.0 25 100 75 110 t j , junction temperature ( c) 2N5060,61 100 v ak = 7.0 v r l = 100 r gk = 1.0 k 0.2 0.5 1.0 2.0 5.0 10 20 50 200 v ak = 7.0 v r l = 100 2n5062-64 2N5060-61 typical characteristics 50 0 ? 75 -50 -25 25 100 75 110 t j , junction temperature ( c) 50 0 -75 -50 -25 25 100 75 t j , junction temperature ( c) v g , gate trigger voltage (volts) i gt , gate trigger current (normalized) i h , holding current (normalized) 2n5062-64 0.02 0.2 20 10 5.0 2.0 1.0 0.05 0.01 0.002 0.005 0.5 0.02 0.01 0.5 0.1 0.05 0.1 0.2 t, time (seconds) 1.0 r(t), transient thermal resistance normalized 110 figure 6. thermal response figure 7. typical gate trigger voltage figure 8. typical gate trigger current figure 9. typical holding current www.kersemi.com
2N5060 series 6 ordering information device package shipping 2 2N5060 to?92 5,000 units / box 2N5060rlra to?92 2,000 / tape & reel 2N5060rlrm to?92 2,000 / ammo pack 2n5061 to?92 5,000 units / box 2n5061g to?92 (pb?free) 5,000 units / box 2n5061rlra to?92 2,000 / tape & reel 2n5061rlrag to?92 (pb?free) 2,000 / tape & reel 2n5061rlrm to?92 2,000 / ammo pack 2n5062 to?92 5,000 units / box 2n5062rlra to?92 2,000 / tape & reel 2n5064 to?92 5,000 units / box 2n5064rlra to?92 2,000 / tape & reel 2n5064rlrm to?92 2,000 / ammo pack 2N5060rl1 to?92 2,000 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. www.kersemi.com
2N5060 series 7 package dimensions to?92 to?226aa case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 10: pin 1. cathode 2. gate 3. anode www.kersemi.com
|
